MOCVD metal organic chemical vapor source

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Chuanbei Vacuum Technology (Beijing) Co., Ltd.

Chaoyang District, Beijing, China No. 1 in Division A Beishatan Electric Building, seven (100 083)

86-10-62760021 62760038, 86-10-60715600 60715604

MOCVD metal organic chemical vapor source


company	Chuanbei Vacuum Technology (Beijing) Co., Ltd.
Categories	Office Desks
Update	2011-03-29
Original Region	China
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MOCVD metal organic chemical vapor source

Name：	MOCVD metal organic chemical vapor source
Introduction：	This family of devices Ⅲ,group elements, organic compounds and V,group elements, such as crystal growth hydride source material to thermal decomposition method for vapor phase epitaxy in the substrate, the growth of various Ⅲ-V family, Ⅱ-compound semiconductors and their solid solution of multi-layer single crystal materials.
Features：	lmachine modular, standardized design, the key parts are imported, stable and reliable quality, quick installation, easy maintenance; lwork pressure closed loop control to improve process stability and reliability; lgrowth process gas flow, substrate speed, substrate temperature, growth chamber pressure of work by a computer process parameters such as real-time control; luse of magnetic fluid sealing technology, samples can be 0 ~ 1500rpm range of rotation; lcan be used for III - V nitride materials and low-dimensional or multi-layer structure of the atmospheric pressure and low growth; lhave a power failure alarm, over temperature / under temperature alarm, over temperature alarm limit, the reaction chamber pressure in the alarm and other security features; lgrowth chamber, the background vacuum up to 1.010-5Pa, growth pressure can be 1.0 ~ 1.010-5Pa set within the pretreatment chamber of the vacuum up to 1.010-5Pa.

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